| Mfr Part # | Qty | Price | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMP2021UFDE-13
MOSFET P-CH 20V 11.1A 6UDFN
Diodes Incorporated
|
7,032 | 0.18720 | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 11.1A (Ta) | 1.5V, 4.5V | 16mOhm @ 7A, 4.5V | 1V @ 250µA | 59 nC @ 8 V | ±10V | 2760 pF @ 15 V | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type E) | 6-PowerUDFN | Details |
|
NTR1P02LT1G
MOSFET P-CH 20V 1.3A SOT23-3
onsemi
|
5,330 | 0.42000 | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 1.3A (Ta) | 2.5V, 4.5V | 220mOhm @ 750mA, 4.5V | 1.25V @ 250µA | 5.5 nC @ 4 V | ±12V | 225 pF @ 5 V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 | Details |
|
PMXB75UPE/M5147
P-CHANNEL MOSFET
NXP USA Inc.
|
45,000 | 0.08000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
PSMN013-80YS,115
MOSFET N-CH 80V 60A LFPAK56
Nexperia USA Inc.
|
2,239 | 0.45665 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 60A (Tc) | 10V | 12.9mOhm @ 15A, 10V | 4V @ 1mA | 37 nC @ 10 V | ±20V | 2420 pF @ 40 V | - | 106W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 | Details |
|
YJL2301F-F2-0000HF
P-CH MOSFET 20V 2A SOT-23-3L
Yangzhou Yangjie Electronic Technology Co.,Ltd
|
9,025 | 0.29000 | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 2A (Ta) | 1.8V, 4.5V | 94mOhm @ 1.5A, 4.5V | 1V @ 250µA | 4.5 nC @ 4.5 V | ±10V | 327 pF @ 10 V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 | Details |
|
IMW65R107M1HXKSA1
MOSFET 650V NCH SIC TRENCH
Infineon Technologies
|
2,280 | 12.46000 | Active | - | - | - | 20A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
NTMFS4121NT1G
MOSFET N-CH 30V 11A 5DFN
onsemi
|
728,470 | 0.34000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4.5V, 10V | 5.25mOhm @ 24A, 10V | 2.5V @ 250µA | 40 nC @ 4.5 V | ±20V | 2700 pF @ 24 V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads | Details |
|
IRFSL3207ZPBF
MOSFET N-CH 75V 120A TO262
Infineon Technologies
|
1,474 | 4.03000 | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 4.1mOhm @ 75A, 10V | 4V @ 150µA | 170 nC @ 10 V | ±20V | 6920 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | Details |
|
IXFN340N06
MOSFET N-CH 60V 340A SOT-227B
IXYS
|
5,148 | 36.69800 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 340A (Tc) | 10V | 3mOhm @ 100A, 10V | 4V @ 8mA | 600 nC @ 10 V | ±20V | 16800 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC | Details |
|
SI2306-TP
MOSFET N-CH 30V 3.16A SOT23
Micro Commercial Co
|
1,966 | 0.47000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 3.16A (Ta) | 10V | 65mOhm @ 2.5A, 4.5V | 3V @ 250µA | 4.5 nC @ 5 V | ±20V | 305 pF @ 15 V | - | 750mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 | Details |
|
STD18N60M6
MOSFET N-CH 600V 13A DPAK
STMicroelectronics
|
7,536 | 2.60000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 4.75V @ 250µA | 16.8 nC @ 10 V | ±25V | 650 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
2SK1835-E
MOSFET N-CH 1500V 4A TO3P
Renesas Electronics America Inc
|
2,953 | 7.85000 | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 4A (Ta) | 15V | 7Ohm @ 2A, 15V | - | - | ±20V | 1700 pF @ 10 V | - | 125W (Tc) | 150°C (TJ) | Through Hole | TO-3P | TO-220-3 Full Pack | Details |
|
TPHR9203PL,L1Q
MOSFET N-CH 30V 150A 8SOP
Toshiba Semiconductor and Storage
|
8,037 | 1.55000 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 150A (Tc) | 4.5V, 10V | - | 2.1V @ 500µA | 80 nC @ 10 V | ±20V | 7540 pF @ 15 V | - | 132W (Tc) | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN | Details |
|
BUK7Y10-30B,115
MOSFET N-CH 30V 67A LFPAK56
Nexperia USA Inc.
|
6,255 | 0.79000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 67A (Tc) | 10V | 10mOhm @ 25A, 10V | 4V @ 1mA | 18.8 nC @ 10 V | ±20V | 1183 pF @ 25 V | - | 85W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 | Details |
|
IXFA110N15T2
MOSFET N-CH 150V 110A TO263
IXYS
|
39 | 6.69000 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 110A (Tc) | 10V | 13mOhm @ 55A, 10V | 4.5V @ 250µA | 150 nC @ 10 V | ±20V | 8600 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
NDD04N50ZT4G
MOSFET N-CH 500V 3A DPAK
onsemi
|
156,496 | 0.36000 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 3A (Tc) | 10V | 2.7Ohm @ 1.5A, 10V | 4.5V @ 50µA | 12 nC @ 10 V | ±30V | 308 pF @ 25 V | - | 61W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | Details |
|
DMTH10H2M5STLWQ-13
MOSFET BVDSS: 61V~100V,POWERDI10
Diodes Incorporated
|
2,774 | 4.90000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 215A (Tc) | 10V | 2.5mOhm @ 30A, 10V | 4V @ 250µA | 124.4 nC @ 10 V | ±20V | 8450 pF @ 50 V | - | 5.8W (Ta), 230.8W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-363 | 6-TSSOP, SC-88, SOT-363 | Details |
|
IRFU3910PBF
MOSFET N-CH 100V 16A IPAK
Infineon Technologies
|
16 | 0.99000 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 16A (Tc) | 10V | 115mOhm @ 10A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251AA) | TO-251-3 Short Leads, IPak, TO-251AA | Details |
|
STU7NM60N
MOSFET N-CH 600V 5A IPAK
STMicroelectronics
|
4,971 | 2.55000 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 5A (Tc) | 10V | 900mOhm @ 2.5A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±25V | 363 pF @ 50 V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA | Details |
|
SPU02N60C3BKMA1
MOSFET N-CH 650V 1.8A TO251-3
Infineon Technologies
|
10 | 1.67000 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 3.9V @ 80µA | 12.5 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3-21 | TO-251-3 Short Leads, IPak, TO-251AA | Details |
|
FDB15N50
MOSFET N-CH 500V 15A D2PAK
onsemi
|
685 | 3.34000 | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 15A (Tc) | 10V | 380mOhm @ 7.5A, 10V | 4V @ 250µA | 41 nC @ 10 V | ±30V | 1850 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Details |
|
AOI409
MOSFET P-CH 60V 26A TO251A
Alpha & Omega Semiconductor Inc.
|
8,930 | 0.44970 | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 26A (Tc) | 4.5V, 10V | 40mOhm @ 20A, 10V | 2.4V @ 250µA | 54 nC @ 10 V | ±20V | 3600 pF @ 30 V | - | 2.5W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak | Details |
|
NVBGS4D1N15MC
MOSFET N-CH 150V 20A/185A D2PAK
onsemi
|
786 | 18.25000 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 20A (Ta), 185A (Tc) | 8V, 10V | 4.1mOhm @ 104A, 10V | 4.5V @ 574µA | 88.9 nC @ 10 V | ±20V | 7285 pF @ 75 V | - | 3.7W (Ta), 316W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263) | TO-263-7, D²Pak (6 Leads + Tab) | Details |
|
IAUC100N04S6N022ATMA1
IAUC100N04S6N022ATMA1
Infineon Technologies
|
6,982 | 1.29000 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 7V, 10V | 2.26mOhm @ 50A, 10V | 3V @ 32µA | 39 nC @ 10 V | ±20V | 2421 pF @ 25 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN | Details |
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