Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1,675 parts
Mfr Part # Qty Price Product Status Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Resistor - Base (R1) Resistor - Emitter Base (R2) DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) Frequency - Transition Power - Max Mounting Type Package / Case Supplier Device Package
RN2705JE(TE85L,F) RN2705JE(TE85L,F)
TRANS 2PNP PREBIAS 0.1W ESV
Toshiba Semiconductor and Storage
8,071 0.48000 Active 2 PNP - Pre-Biased (Dual) 100mA 50V 2.2kOhms 47kOhms 80 @ 10mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 200MHz 100mW Surface Mount SOT-553 ESV Details
NHUMH9X NHUMH9X
TRANS PREBIAS 2NPN 80V 6TSSOP
Nexperia USA Inc.
9,473 0.05170 Active 2 NPN - Pre-Biased (Dual) 100mA 80V 10kOhms 47kOhms 100 @ 10mA, 5V 100mV @ 500µA, 10mA 100nA 170MHz 350mW Surface Mount 6-TSSOP, SC-88, SOT-363 6-TSSOP Details
NSBA114YDXV6T1 NSBA114YDXV6T1
TRANS 2PNP PREBIAS 0.5W SOT563
onsemi
144,000 0.04000 Obsolete 2 PNP - Pre-Biased (Dual) 100mA 50V 10kOhms 47kOhms 80 @ 5mA, 10V 250mV @ 300µA, 10mA 500nA - 500mW Surface Mount SOT-563, SOT-666 SOT-563 Details
UP0431100L UP0431100L
TRANS PREBIAS NPN/PNP SSMINI6
Panasonic Electronic Components
163 0.26000 Obsolete 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 10kOhms 10kOhms 35 @ 5mA, 10V 250mV @ 300µA, 10mA 500nA 150MHz, 80MHz 125mW Surface Mount SOT-563, SOT-666 SSMINI6-F1 Details
RN4903FE,LXHF(CT RN4903FE,LXHF(CT
AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Toshiba Semiconductor and Storage
7,710 0.39000 Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 22kOhms 22kOhms 70 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 200MHz, 250MHz 100mW Surface Mount SOT-563, SOT-666 ES6 Details
DDC114TU-7 DDC114TU-7
TRANS 2NPN PREBIAS 0.2W SOT363
Diodes Incorporated
16,447 0.42000 Active 2 NPN - Pre-Biased (Dual) 100mA 50V 10kOhms - 100 @ 1mA, 5V 300mV @ 100µA, 1mA 500nA 250MHz 200mW Surface Mount 6-TSSOP, SC-88, SOT-363 SOT-363 Details
UMH1N-TP UMH1N-TP
TRANS 2NPN PREBIAS 0.15W SOT363
Micro Commercial Co
4,089 0.43000 Active 2 NPN - Pre-Biased (Dual) 100mA 50V 22kOhms 22kOhms 56 @ 5mA, 5V 300mV @ 500µA, 10mA 500nA 250MHz 150mW Surface Mount 6-TSSOP, SC-88, SOT-363 SOT-363 Details
NHUMH10F NHUMH10F
TRANS PREBIAS 1NPN 1PNP 6TSSOP
Nexperia USA Inc.
10,000 0.05170 Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 80V 2.2kOhms 47kOhms 100 @ 10mA, 5V 100mV @ 500µA, 10mA 100nA 170MHz, 150MHz 350mW Surface Mount 6-TSSOP, SC-88, SOT-363 6-TSSOP Details
PEMD20,115 PEMD20,115
TRANS PREBIAS 1NPN 1PNP SOT666
Nexperia USA Inc.
7,146 0.08270 Not For New Designs 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 2.2kOhms 2.2kOhms 30 @ 20mA, 5V 150mV @ 500µA, 10mA 1µA - 300mW Surface Mount SOT-563, SOT-666 SOT-666 Details
MUN5211DW1T1G MUN5211DW1T1G
TRANS PREBIAS 2NPN 50V SC88
onsemi
8,276 0.29000 Active 2 NPN - Pre-Biased (Dual) 100mA 50V 10kOhms 10kOhms 35 @ 5mA, 10V 250mV @ 300µA, 10mA 500nA - 250mW Surface Mount 6-TSSOP, SC-88, SOT-363 SC-88/SC70-6/SOT-363 Details
RN2901FE,LXHF(CT RN2901FE,LXHF(CT
AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Toshiba Semiconductor and Storage
9,774 0.39000 Active 2 PNP - Pre-Biased (Dual) 100mA 50V 4.7kOhms 4.7kOhms 30 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 200MHz 100mW Surface Mount SOT-563, SOT-666 ES6 Details
NSVMUN5135DW1T1G NSVMUN5135DW1T1G
TRANS 2PNP PREBIAS 50V SOT363-6
onsemi
2,531 0.41000 Active 2 PNP - Pre-Biased (Dual) 100mA 50V 2.2kOhms 47kOhms 80 @ 5mA, 10V 250mV @ 300µA, 10mA 500nA - 250mW Surface Mount 6-TSSOP, SC-88, SOT-363 SC-88/SC70-6/SOT-363 Details
PEMD4,115 PEMD4,115
TRANS PREBIAS 1NPN 1PNP SOT666
Nexperia USA Inc.
4,363 0.39000 Not For New Designs 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 10kOhms - 200 @ 1mA, 5V 150mV @ 500µA, 10mA 1µA - 300mW Surface Mount SOT-563, SOT-666 SOT-666 Details
RN1709JE(TE85L,F) RN1709JE(TE85L,F)
NPN X 2 BRT Q1BSR=47KOHM Q1BER=2
Toshiba Semiconductor and Storage
3,873 0.41000 Active 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 100mA 50V 47kOhms 22kOhms 70 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 250MHz 100mW Surface Mount SOT-553 ESV Details
DEMD48-7 DEMD48-7
TRANS PREBIAS NPN/PNP SOT563
Diodes Incorporated
1,260 0.36000 Obsolete 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 47kOhms, 2.2kOhms 47kOhms 80 @ 5mA, 5V / 100 @ 10mA, 5V 150mV @ 500µA, 10mA / 100mV @ 250µA, 5mA 1µA - 300mW Surface Mount SOT-563, SOT-666 SOT-563 Details
RN2712JE(TE85L,F) RN2712JE(TE85L,F)
TRANS 2PNP PREBIAS 0.1W ESV
Toshiba Semiconductor and Storage
4,000 0.48000 Active 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 100mA 50V 22kOhms - 120 @ 1mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 200MHz 100mW Surface Mount SOT-553 ESV Details
DDA144EUQ-7-F DDA144EUQ-7-F
PREBIAS TRANSISTOR SOT363 T&R 3K
Diodes Incorporated
9,608 0.07910 Active 2 PNP - Pre-Biased (Dual) 100mA 50V 47kOhms 47kOhms 68 @ 5mA, 5V 300mV @ 500µA, 10mA 500nA (ICBO) 250MHz 200mW Surface Mount 6-TSSOP, SC-88, SOT-363 SOT-363 Details
NSBC114YDXV6T1G NSBC114YDXV6T1G
TRANS PREBIAS 2NPN 50V SOT563
onsemi
403 0.47000 Active 2 NPN - Pre-Biased (Dual) 100mA 50V 10kOhms 47kOhms 80 @ 5mA, 10V 250mV @ 300µA, 10mA 500nA - 500mW Surface Mount SOT-563, SOT-666 SOT-563 Details
RN2906,LF RN2906,LF
TRANS 2PNP PREBIAS 0.2W US6
Toshiba Semiconductor and Storage
8,021 0.29000 Active 2 PNP - Pre-Biased (Dual) 100mA 50V 4.7kOhms 47kOhms 80 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 200MHz 200mW Surface Mount 6-TSSOP, SC-88, SOT-363 US6 Details
SMUN5114DW1T1G SMUN5114DW1T1G
TRANS 2PNP PREBIAS 0.187W SOT363
onsemi
2,930 0.41000 Active 2 PNP - Pre-Biased (Dual) 100mA 50V 10kOhms 47kOhms 80 @ 5mA, 10V 250mV @ 300µA, 10mA 500nA - 187mW Surface Mount 6-TSSOP, SC-88, SOT-363 SC-88/SC70-6/SOT-363 Details
DCX114TU-7-F DCX114TU-7-F
TRANS PREBIAS NPN/PNP SOT363
Diodes Incorporated
1,673 0.52000 Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 10kOhms - 100 @ 1mA, 5V 300mV @ 100µA, 1mA - 250MHz 200mW Surface Mount 6-TSSOP, SC-88, SOT-363 SOT-363 Details
NSVMUN5137DW1T1G NSVMUN5137DW1T1G
TRANS PREBIAS 2PNP 50V SC88
onsemi
41,689 0.11770 Active 2 PNP - Pre-Biased (Dual) 100mA 50V 47kOhms 22kOhms 80 @ 5mA, 10V 250mV @ 300µA, 10mA 500nA - 250mW Surface Mount 6-TSSOP, SC-88, SOT-363 SC-88/SC70-6/SOT-363 Details
RN1901,LF(CT RN1901,LF(CT
TRANS 2NPN PREBIAS 0.2W US6
Toshiba Semiconductor and Storage
5,636 0.04880 Active 2 NPN - Pre-Biased (Dual) 100mA 50V 4.7kOhms 1kOhms 30 @ 10mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 250MHz 200mW Surface Mount 6-TSSOP, SC-88, SOT-363 US6 Details
BCR08PNH6327XTSA1 BCR08PNH6327XTSA1
TRANS NPN/PNP PREBIAS SOT363
Infineon Technologies
2,858 0.09520 Not For New Designs 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 2.2kOhms 47kOhms 70 @ 5mA, 5V 300mV @ 500µA, 10mA - 170MHz 250mW Surface Mount 6-VSSOP, SC-88, SOT-363 PG-SOT363-PO Details

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