| Mfr Part # | Qty | Price | Product Status | Driven Configuration | Channel Type | Number of Drivers | Gate Type | Voltage - Supply | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Input Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MAX4420EPA
IC GATE DRVR LOW-SIDE 8DIP
Analog Devices Inc./Maxim Integrated
|
378 | 2.19000 | Obsolete | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP | Details |
|
MCP14A0602T-E/SN
IC GATE DRVR LOW-SIDE 8SOIC
Microchip Technology
|
1,327 | 1.18500 | Active | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2V | 6A, 6A | Non-Inverting | - | 10ns, 10ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
IR2117PBF
IC GATE DRVR HIGH-SIDE 8DIP
Infineon Technologies
|
2,253 | 3.36000 | Active | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP | Details |
|
MCP14A0051T-E/CH
IC GATE DRVR HI/LOW SIDE SOT23
Microchip Technology
|
2,490 | 0.83000 | Active | High-Side or Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2V | 500mA, 500mA | Inverting | - | 40ns, 28ns | -40°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 | Details |
|
ISL2111ARTZ
IC GATE DRVR HALF-BRIDGE 10TDFN
Renesas Electronics America Inc
|
7,332 | 5.29000 | Active | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 14V | 1.4V, 2.2V | 3A, 4A | Non-Inverting | 114 V | 9ns, 7.5ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Details |
|
ADP3624ARHZ-RL
IC GATE DRVR LOW-SIDE 8MSOP
Analog Devices Inc.
|
53,862 | 4.50000 | Active | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2V | 4A, 4A | Non-Inverting | - | 10ns, 10ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-EP | Details |
|
ISL6208IBZ
IC GATE DRVR HALF-BRIDGE 8SOIC
Renesas Electronics America Inc
|
2 | 2.38000 | Active | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5V ~ 5.5V | 0.5V, 2V | 2A, 2A | Non-Inverting | 33 V | 8ns, 8ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
UCC27200DR
IC GATE DRVR HALF-BRIDGE 8SOIC
Texas Instruments
|
7 | 2.45000 | Active | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 17V | 3V, 8V | 3A, 3A | Non-Inverting | 120 V | 8ns, 7ns | -40°C ~ 140°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
AUIR2085STR
IC GATE DRVR HALF-BRIDGE 8SOIC
Infineon Technologies
|
6,479 | 3.88000 | Active | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10V ~ 15V | - | 1A, 1A | RC Input Circuit | 100 V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8-904 | Details |
|
HIP2101EIBZT
IC GATE DRVR HALF-BRIDGE 8SOIC
Renesas Electronics America Inc
|
8,471 | 5.16000 | Active | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9V ~ 14V | 0.8V, 2.2V | 2A, 2A | Non-Inverting | 114 V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP | Details |
|
ISL89164FRTAZ-T
IC GATE DRVR LOW-SIDE 8TDFN
Renesas Electronics America Inc
|
7,546 | 2.35284 | Active | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5V ~ 16V | 1.22V, 2.08V | 6A, 6A | Inverting | - | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Details |
|
DGD0503FN-7
IC GATE DRV HALF-BRDG DFN3030-10
Diodes Incorporated
|
3,648 | 0.91000 | Active | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Inverting, Non-Inverting | 100 V | 70ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 10-WFDFN Exposed Pad | W-DFN3030-10 (Type TH) | Details |
|
IXDI609SIA
IC GATE DRVR LOW-SIDE 8SOIC
IXYS Integrated Circuits Division
|
763 | 2.96000 | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
NCD5705BDR2G
GATE DRIVER WITH LOW UVLO THRESH
onsemi
|
3,661 | 1.37000 | Active | Half-Bridge | Single | 1 | IGBT | 20V (Max) | 0.5V, 4.5V | 4A, 6A | Inverting | - | 9.2ns, 7.9ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
UCC27284QDQ1
IC ISOLATION
Texas Instruments
|
9,867 | 1.87529 | Active | Half-Bridge | Independent | 2 | N-Channel MOSFET | 5.5V ~ 16V | 1.3V, 1.9V | 2.5A, 3.5A | Non-Inverting | 120 V | 12ns, 10ns | -40°C ~ 125°C | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
UCC27423QDRQ1
IC GATE DRVR LOW-SIDE 8SOIC
Texas Instruments
|
1,001 | 2.30000 | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4V ~ 15V | 1V, 2V | 4A, 4A | Inverting | - | 20ns, 15ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
LM25101BSD/NOPB
IC GATE DRVR HALF-BRIDGE 10WSON
Texas Instruments
|
3,000 | 2.76576 | Active | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9V ~ 14V | 2.3V, - | 2A, 2A | Non-Inverting | 100 V | 570ns, 430ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-WDFN Exposed Pad | 10-WSON (4x4) | Details |
|
2EDN8524FXTMA1
IC GATE DRVR LOW-SIDE DSO8
Infineon Technologies
|
6,830 | 0.82000 | Active | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5V ~ 20V | 1.2V, 1.9V | 5A, 5A | Non-Inverting | - | 5.3ns, 4.5ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | PG-TSSOP-8 | Details |
|
2ED21091S06FXUMA1
IC GATE DRIVER DSO-8
Infineon Technologies
|
7,168 | 1.19000 | Active | High-Side and Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 1.1V, 1.7V | 290mA, 700mA | - | 20 V | 100ns, 35ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 | Details |
|
LM5114BMF/NOPB
IC GATE DRVR LOW-SIDE SOT23-6
Texas Instruments
|
7,669 | 1.86000 | Active | Low-Side | Single | 1 | N-Channel MOSFET | 4V ~ 12.6V | 0.8V, 2.4V | 1.3A, 7.6A | Inverting, Non-Inverting | - | 82ns, 12.5ns | -40°C ~ 125°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 | Details |
|
1ED44175N01BXTSA1
IC GATE DRVR LOW-SIDE SOT23-6
Infineon Technologies
|
2,809 | 0.85000 | Active | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 12.7V ~ 20V | 1.2V, 1.9V | 2.6A, 2.6A | Non-Inverting | - | 5ns, 5ns | -40°C ~ 125°C (TA) | Surface Mount | SOT-23-6 | PG-SOT23-6-3 | Details |
|
LTC7062IMSE#WPBF
100V DUAL HIGH-SIDE MOSFET GATE
Analog Devices Inc.
|
2,785 | 5.42000 | Active | High-Side | Independent | 2 | N-Channel MOSFET | 5V ~ 14V | - | - | Non-Inverting | 115 V | 18ns, 14ns | -40°C ~ 125°C (TJ) | Surface Mount | 12-TSSOP (0.118", 3.00mm Width) Exposed Pad | 12-MSOP-EP | Details |
|
2SP0115T2C0-12
IC GATE DRVR HALF-BRIDGE MODULE
Power Integrations
|
11 | 99.06000 | Active | Half-Bridge | Independent | 2 | IGBT | 14.5V ~ 15.5V | - | 8A, 15A | - | 1200 V | 5ns, 10ns | -40°C ~ 85°C (TA) | Surface Mount | Module | Module | Details |
|
IXDF604SIATR
IC GATE DRVR LOW-SIDE 8SOIC
IXYS Integrated Circuits Division
|
6,716 | 1.93000 | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 4A, 4A | Inverting, Non-Inverting | - | 9ns, 8ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
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