| Mfr Part # | Qty | Price | Product Status | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CMHSH-3 TR PBFREE
DIODE SCHOTTKY 30V 200MA SOD123
Central Semiconductor Corp
|
8,534 | 0.68000 | Active | Schottky | 30 V | 200mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 7 ns | 2 µA @ 25 V | 7pF @ 1V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -65°C ~ 150°C | Details |
|
VS-ETU3006-1-M3
DIODE GEN PURP 600V 30A TO262
Vishay General Semiconductor - Diodes Division
|
7,369 | 1.00580 | Active | Standard | 600 V | 30A | 2 V @ 70 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 30 µA @ 600 V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | -65°C ~ 175°C | Details |
|
RSFKLHMHG
DIODE GEN PURP 800V 500MA SUBSMA
Taiwan Semiconductor Corporation
|
3,839 | 0.10530 | Active | Standard | 800 V | 500mA | 1.3 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 800 V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C | Details |
|
1N5822G
DIODE SCHOTTKY 40V 3A DO201AD
onsemi
|
32,858 | 0.69000 | Active | Schottky | 40 V | 3A | 525 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2 mA @ 40 V | - | Through Hole | DO-201AA, DO-27, Axial | Axial | -65°C ~ 125°C | Details |
|
BAT54XV2-F2-0000HF
DIODE SCHOTTKY 30V 200MA SOD523
Yangzhou Yangjie Electronic Technology Co.,Ltd
|
1,576 | 0.22000 | Active | Schottky | 30 V | 200mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 2 µA @ 25 V | 10pF @ 1V, 1MHz | Surface Mount | SC-79, SOD-523 | SOD-523 | 125°C | Details |
|
BYC30W-600PQ
DIODE GEN PURP 600V 30A TO247-2
WeEn Semiconductors
|
18 | 2.60000 | Active | Standard | 600 V | 30A | 2.75 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 22 ns | 10 µA @ 600 V | - | Through Hole | TO-247-2 | TO-247-2 | 175°C (Max) | Details |
|
SE20FGHM3/H
DIODE GEN PURP 400V 1.7A DO219AB
Vishay General Semiconductor - Diodes Division
|
7,908 | 0.10580 | Active | Standard | 400 V | 1.7A | 1.1 V @ 2 A | Standard Recovery >500ns, > 200mA (Io) | 920 ns | 5 µA @ 400 V | 13pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C | Details |
|
VS-85HFR60
DIODE GEN PURP 600V 85A DO203AB
Vishay General Semiconductor - Diodes Division
|
8,432 | 13.11000 | Active | Standard, Reverse Polarity | 600 V | 85A | 1.2 V @ 267 A | Standard Recovery >500ns, > 200mA (Io) | - | 9 mA @ 600 V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 180°C | Details |
|
SMMDL914T1G
DIODE GEN PURP 100V 200MA SOD323
onsemi
|
5,277 | 0.39000 | Active | Standard | 100 V | 200mA (DC) | 1 V @ 10 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 5 µA @ 75 V | 4pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 150°C | Details |
|
PAD10DFN 8L
DIODE GEN PURP 30V 10MA 8DFN
Linear Integrated Systems, Inc.
|
1,000 | 3.38000 | Active | Standard | 30 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 10 pA @ 20 V | 1.5pF @ 5V, 1MHz | Surface Mount | 8-VFDFN Exposed Pad | 8-DFN (2x2) | -55°C ~ 150°C | Details |
|
VS-25FR80M
DIODE GEN PURP 800V 25A DO203AA
Vishay General Semiconductor - Diodes Division
|
9,253 | 11.86000 | Active | Standard, Reverse Polarity | 800 V | 25A | 1.3 V @ 78 A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C | Details |
|
NTE622
D-400V .5A FAST REC SMT
NTE Electronics, Inc
|
598 | 0.36000 | Active | Standard | 400 V | 500mA | 1.2 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 400 V | 4pF @ 4V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C | Details |
|
EGP20A
RECTIFIER DIODE, 2A, 50V, DO-15
Fairchild Semiconductor
|
27,813 | 0.23000 | Active | Standard | 50 V | 2A | 950 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 50 V | 70pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -65°C ~ 150°C | Details |
|
GPP10B-E3/54
DIODE GEN PURP 100V 1A DO204AL
Vishay General Semiconductor - Diodes Division
|
5,640 | 0.05400 | Active | Standard | 100 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 100 V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C | Details |
|
NRVUA210VT3G
DIODE GEN PURP 100V 2A SMA
onsemi
|
2,350 | 0.45000 | Active | Standard | 100 V | 2A | 940 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 100 V | - | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 175°C | Details |
|
1SS119-04TJ-E-Q
DIODE FOR HIGH SPEED SWITCHING
Renesas Electronics America Inc
|
285,000 | 0.10000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
RS1M-HF
RECTIFIER FAST RECOVERY 1000V 1A
Comchip Technology
|
3,021 | 0.37000 | Active | Standard | 1000 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C | Details |
|
SB260-E3/53
DIODE SCHOTTKY 2A 60V DO-41
Vishay General Semiconductor - Diodes Division
|
7,407 | 0.27160 | Active | Schottky | 60 V | 2A | 680 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 60 V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C | Details |
|
BY228GP-E3/54
DIODE GEN PURP 1.5KV 2.5A DO201
Vishay General Semiconductor - Diodes Division
|
8,617 | 1.66000 | Active | Standard | 1500 V | 2.5A | 1.6 V @ 2.5 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 5 µA @ 1500 V | 40pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C | Details |
|
ES07B-GS08
DIODE GEN PURP 100V 500MA DO219
Vishay General Semiconductor - Diodes Division
|
47,721 | 0.45000 | Active | Standard | 100 V | 500mA | 980 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 10 µA @ 100 V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C | Details |
|
V12P12HM3_A/H
DIODE SCHOTTKY 120V 3.9A TO277A
Vishay General Semiconductor - Diodes Division
|
2,580 | 0.92000 | Active | Schottky | 120 V | 3.9A | 830 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400 µA @ 120 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C | Details |
|
MUR815G
DIODE GEN PURP 150V 8A TO220AC
onsemi
|
5,534 | 1.21000 | Active | Standard | 150 V | 8A | 975 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 150 V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C | Details |
|
SS2FH10HM3/I
DIODE SCHOTTKY 100V 2A DO-219AB
Vishay General Semiconductor - Diodes Division
|
6,776 | 0.11810 | Active | Schottky | 100 V | 2A | 860 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 µA @ 100 V | 70pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C | Details |
|
VS-71HF20
DIODE GEN PURP 200V 70A DO203AB
Vishay General Semiconductor - Diodes Division
|
4,953 | 9.02250 | Active | Standard | 200 V | 70A | 1.35 V @ 220 A | Standard Recovery >500ns, > 200mA (Io) | - | 15 mA @ 200 V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 180°C | Details |
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