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Diodes - Rectifiers - Single

47,406 parts
Mfr Part # Qty Price Product Status Diode Type Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Mounting Type Package / Case Supplier Device Package Operating Temperature - Junction
DFLS240LQ-7 DFLS240LQ-7
DIODE SCHOTTKY 40V 2A POWERDI123
Diodes Incorporated
 875 0.72000 Active Schottky 40 V 2A 650 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 20 V 90pF @ 10V, 1MHz Surface Mount POWERDI®123 PowerDI™ 123 -55°C ~ 125°C Details
MBRB16H60HE3_B/P MBRB16H60HE3_B/P
DIODE SCHOTTKY 60V 16A TO263AB
Vishay General Semiconductor - Diodes Division
 9,277 0.79200 Active Schottky 60 V 16A 730 mV @ 16 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 60 V - Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263AB -65°C ~ 175°C Details
VI30120S-M3/4W VI30120S-M3/4W
DIODE SCHOTTKY 30A 120V TO-262AA
Vishay General Semiconductor - Diodes Division
 6,307 0.79450 Active Schottky 120 V 30A 1.1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 120 V - Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262AA -40°C ~ 150°C Details
MBR10U45L-TP MBR10U45L-TP
DIODE SCHOTTKY 45V 10A TO277
Micro Commercial Co
 2,491 0.91000 Active Schottky 45 V 10A 470 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 45 V - Surface Mount TO-277, 3-PowerDFN TO-277-3 -55°C ~ 150°C Details
SRT14H SRT14H
DIODE SCHOTTKY 40V 1A TS-1
Taiwan Semiconductor Corporation
 4,671 0.06690 Active Schottky 40 V 1A 550 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 40 V - Through Hole T-18, Axial TS-1 -55°C ~ 125°C Details
SK35 SK35
SchottkyD, 50V, 3A
Diotec Semiconductor
 4,796 2.67000 Active Schottky 50 V 3A 750 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 30 µA @ 50 V - Surface Mount DO-214AB, SMC SMC (DO-214AB) -50°C ~ 150°C Details
FDH300ATR FDH300ATR
RECTIFIER DIODE, 0.2A, 125V, DO-
Fairchild Semiconductor
 15,000 0.05000 Active Standard 125 V 200mA 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed - 1 nA @ 125 V 6pF @ 0V, 1MHz Through Hole DO-204AH, DO-35, Axial DO-35 (DO-204AH) 175°C (Max) Details
D1800N44TVFXPSA1 D1800N44TVFXPSA1
DIODE GEN PURP 4400V 1800A
Infineon Technologies
 2 398.32000 Active Standard 4400 V 1800A 1.32 V @ 1500 A Standard Recovery >500ns, > 200mA (Io) - 100 mA @ 4400 V - Chassis Mount DO-200AC, K-PUK - -40°C ~ 160°C Details
BAT54T-7-F BAT54T-7-F
DIODE SCHOTTKY 30V 200MA SOT523
Diodes Incorporated
 9,478 0.36000 Active Schottky 30 V 200mA (DC) 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 5 ns 2 µA @ 25 V 10pF @ 10V, 1MHz Surface Mount SOT-523 SOT-523 -65°C ~ 125°C Details
VS-SD403C12S15C VS-SD403C12S15C
DIODE GP 1.2KV 430A DO200AA
Vishay General Semiconductor - Diodes Division
 2,567 72.40000 Active Standard 1200 V 430A 1.83 V @ 1350 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 35 mA @ 1200 V - Clamp On DO-200AA, A-PUK DO-200AA, A-PUK - Details
BAT54W,115 BAT54W,115
DIODE SCHOTTKY 30V 200MA SOT323
Nexperia USA Inc.
 1,225 0.19000 Active Schottky 30 V 200mA (DC) 800 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 5 ns 2 µA @ 25 V 10pF @ 1V, 1MHz Surface Mount SC-70, SOT-323 SOT-323 150°C (Max) Details
SS56B-F1-0000HF SS56B-F1-0000HF
DIODE SCHOTTKY 60V 5A DO214AA
Yangzhou Yangjie Electronic Technology Co.,Ltd
 9,180 0.38000 Active Schottky 60 V 5A 700 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 60 V - Surface Mount DO-214AA, SMB DO-214AA (SMB) -55°C ~ 150°C Details
DZ540N22KHPSA1 DZ540N22KHPSA1
DIODE GEN PURP 2.2KV 732A MODULE
Infineon Technologies
 3,514 274.10000 Active Standard 2200 V 732A 1.64 V @ 2200 A Standard Recovery >500ns, > 200mA (Io) - 40 mA @ 2200 V - Chassis Mount Module Module -40°C ~ 150°C Details
SE70PDHM3_A/H SE70PDHM3_A/H
DIODE GEN PURP 200V 2.9A TO277A
Vishay General Semiconductor - Diodes Division
 1,736 0.41250 Active Standard 200 V 2.9A 1.05 V @ 7 A Standard Recovery >500ns, > 200mA (Io) 2.6 µs 20 µA @ 200 V 76pF @ 4V, 1MHz Surface Mount TO-277, 3-PowerDFN TO-277A (SMPC) -55°C ~ 175°C Details
MURB1J_R1_00001 MURB1J_R1_00001
SMB, SUPER
Panjit International Inc.
 474 0.43000 Active Standard 600 V 1A 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 600 V - Surface Mount DO-214AA, SMB SMB (DO-214AA) -55°C ~ 175°C Details
US1GWF-7 US1GWF-7
DIODE GEN PURP 400V 1A SOD123F
Diodes Incorporated
 286,942 0.51000 Active Standard 400 V 1A 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 1 µA @ 400 V 9pF @ 4V, 1MHz Surface Mount SOD-123F SOD-123F -55°C ~ 150°C Details
BAV116WSQ-7 BAV116WSQ-7
DIODE GEN PURP 85V 215MA SOD323
Diodes Incorporated
 770,834 0.29000 Active Standard 85 V 215mA 1.25 V @ 150 mA Standard Recovery >500ns, > 200mA (Io) 3 µs 5 nA @ 75 V 1.5pF @ 0V, 1MHz Surface Mount SC-76, SOD-323 SOD-323 -55°C ~ 150°C Details
IDH05G65C5XKSA2 IDH05G65C5XKSA2
DIODE SCHOTTKY 650V 5A TO220-2
Infineon Technologies
 9,881 1.82470 Active Silicon Carbide Schottky 650 V 5A (DC) 1.7 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 650 V 160pF @ 1V, 1MHz Through Hole TO-220-2 PG-TO220-2 -55°C ~ 175°C Details
NTE6006 NTE6006
R-200V 40A FAST REC CC
NTE Electronics, Inc
 12 15.50000 Active Standard 200 V 40A 1.4 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 50 µA @ 200 V - Stud Mount DO-203AA, DO-5, Stud DO-5 -65°C ~ 160°C Details
VS-15TQ060S-M3 VS-15TQ060S-M3
DIODE SCHOTTKY 60V 15A D2PAK
Vishay General Semiconductor - Diodes Division
 1,814 1.48000 Active Schottky 60 V 15A 620 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 800 µA @ 60 V 720pF @ 5V, 1MHz Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263AB (D²PAK) -55°C ~ 150°C Details
UF1006-T UF1006-T
DIODE GEN PURP 800V 1A DO41
Diodes Incorporated
 5,632 0.49000 Active Standard 800 V 1A 1.7 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 800 V 10pF @ 4V, 1MHz Through Hole DO-204AL, DO-41, Axial DO-41 -65°C ~ 150°C Details
VS-1N2131A VS-1N2131A
DIODE GEN PURP 200V 60A DO203AB
Vishay General Semiconductor - Diodes Division
 9,151 10.12000 Active Standard 200 V 60A 1.3 V @ 188 A Standard Recovery >500ns, > 200mA (Io) - 10 mA @ 200 V - Chassis, Stud Mount DO-203AB, DO-5, Stud DO-203AB (DO-5) -65°C ~ 200°C Details
6A10-T/B 6A10-T/B
General e Diode R6 1KV 6A
MDD
 9,000 0.38500 Active Standard 1000 V 6A 950 mV @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1000 V 150pF @ 4V, 1MHz Through Hole R-6, Axial R-6 -55°C ~ 150°C Details
GC20MPS12-220 GC20MPS12-220
SIC DIODE 1200V 20A TO-220-2
GeneSiC Semiconductor
 3,659 10.80000 Active Silicon Carbide Schottky 1200 V 94A (DC) 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 18 µA @ 1200 V 1298pF @ 1V, 1MHz Through Hole TO-220-2 TO-220-2 -55°C ~ 175°C Details

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