Diodes - Rectifiers - Single

47,406 parts
Mfr Part # Qty Price Product Status Diode Type Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Mounting Type Package / Case Supplier Device Package Operating Temperature - Junction
SKL36 SKL36
SCHOTTKY SOD-123FL 60V 3A
Diotec Semiconductor
15,000 0.13060 Active Schottky 60 V 3A 700 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 60 V - Surface Mount SOD-123F SOD-123F (SMF) -50°C ~ 150°C Details
SA264 SA264
DIODE FR MELF 1800V 2A
Diotec Semiconductor
25,000 0.21280 Active Standard 1800 V 2A 1.8 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 5 µA @ 1800 V - Surface Mount DO-213AB, MELF MELF DO-213AB -50°C ~ 175°C Details
RS1KLW RVG RS1KLW RVG
DIODE GEN PURP 800V 1A SOD123W
Taiwan Semiconductor Corporation
9,245 0.47000 Active Standard 800 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 5 µA @ 800 V - Surface Mount SOD-123W SOD-123W -55°C ~ 175°C Details
SS5150C SS5150C
SCHOTTKY DIODE SMC 150V 5A
MDD
27,000 0.55550 Active Schottky 150 V 5A 850 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 150 V 400pF @ 4V, 1MHz Surface Mount - - - Details
SK110-AQ SK110-AQ
SCHOTTKY SMA 100V 1A
Diotec Semiconductor
7,500 0.09180 Active Schottky 100 V 1A 850 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 100 V - Surface Mount DO-214AC, SMA DO-214AC, SMA -50°C ~ 150°C Details
VS-T40HFL20S02 VS-T40HFL20S02
DIODE GEN PURP 200V 40A D-55
Vishay General Semiconductor - Diodes Division
2,146 24.28100 Active Standard 200 V 40A - Fast Recovery =< 500ns, > 200mA (Io) 200 ns 100 µA @ 200 V - Chassis Mount D-55 T-Module D-55 - Details
SJPM-H4VR SJPM-H4VR
DIODE GEN PURP 400V 2A SJP
Sanken
5,244 0.26400 Active Standard 400 V 2A 1.1 V @ 2 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 400 V - Surface Mount 2-SMD, J-Lead SJP -40°C ~ 150°C Details
JAN1N4248/TR JAN1N4248/TR
RECTIFIER UFR,FRR
Microchip Technology
4,398 5.20500 Active Standard 800 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 800 V - Through Hole A, Axial - -65°C ~ 175°C Details
FE2D FE2D
DIODE SFR DO-15 200V 2A
Diotec Semiconductor
4,000 0.07780 Active Standard 200 V 2A 980 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 2 µA @ 200 V - Through Hole DO-204AC, DO-15, Axial DO15/DO204AC -50°C ~ 175°C Details
VSS8D3M12HM3/I VSS8D3M12HM3/I
3A, 120V, SLIMSMAW TRENCH SKY
Vishay General Semiconductor - Diodes Division
2,577 0.53000 Active Schottky 120 V 2A 610 mV @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) - 300 µA @ 120 V 310pF @ 4V, 1MHz Surface Mount DO-221AC, SMA Flat Leads SlimSMAW (DO-221AD) -40°C ~ 175°C Details
US1MFA US1MFA
DIODE GEN PURP 1KV 1A SOD123FA
onsemi
61,541 0.51000 Active Standard 1000 V 1A 1.7 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 1000 V 15pF @ 4V, 1MHz Surface Mount SOD-123W SOD-123FA -55°C ~ 150°C Details
VS-20MQ100-M3/5AT VS-20MQ100-M3/5AT
DIODE SCHOTTKY 100V 2A DO214AC
Vishay General Semiconductor - Diodes Division
1,535 0.42000 Active Schottky 100 V 2A 910 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V 38pF @ 10V, 1MHz Surface Mount DO-214AC, SMA DO-214AC (SMA) -55°C ~ 150°C Details
CGRC501-G CGRC501-G
DIODE GEN PURP 50V 5A DO214AB
Comchip Technology
3,017 0.63000 Active Standard 50 V 5A 1.15 V @ 5 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - Surface Mount DO-214AB, SMC DO-214AB (SMC) 150°C (Max) Details
VS-10ETF06S-M3 VS-10ETF06S-M3
DIODE GEN PURP 600V 10A D2PAK
Vishay General Semiconductor - Diodes Division
2,528 0.96570 Active Standard 600 V 10A 1.2 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 100 µA @ 600 V - Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263AB (D²PAK) -40°C ~ 150°C Details
LSM140JE3/TR13 LSM140JE3/TR13
DIODE SCHOTTKY 40V 1A DO214BA
Microchip Technology
5,038 0.42000 Active Schottky 40 V 1A 580 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 40 V - Surface Mount DO-214BA DO-214BA -55°C ~ 150°C Details
MBR1045F_T0_00001 MBR1045F_T0_00001
10 AMPERES SCHOTTKY BARRIER RECT
Panjit International Inc.
8,147 0.78000 Active Schottky 45 V 10A 700 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 45 V - Through Hole TO-220-2 Full Pack, Isolated Tab ITO-220AC -65°C ~ 175°C Details
ES3B-M3/57T ES3B-M3/57T
DIODE GEN PURP 100V 3A DO214AB
Vishay General Semiconductor - Diodes Division
5,357 0.21010 Active Standard 100 V 3A 900 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 100 V 45pF @ 4V, 1MHz Surface Mount DO-214AB, SMC DO-214AB (SMC) -55°C ~ 150°C Details
1N4002RL 1N4002RL
DIODE GEN PURP 100V 1A DO41
onsemi
20,000 0.02000 Obsolete Standard 100 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 100 V - Through Hole DO-204AL, DO-41, Axial Axial -65°C ~ 175°C Details
ES2J-AQ ES2J-AQ
DIODE SFR SMB 600V 2A
Diotec Semiconductor
3,000 0.19590 Active Standard 600 V 2A 1.7 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 600 V - Surface Mount DO-214AA, SMB DO-214AA (SMB) -50°C ~ 150°C Details
SURF1060 SURF1060
DIODE STANDARD 600V ITO220AC
SMC Diode Solutions
774 0.62000 Obsolete Standard 600 V - 2.2 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 600 V - Through Hole TO-220-2 Full Pack, Isolated Tab ITO-220AC -55°C ~ 150°C Details
VS-12F40 VS-12F40
DIODE GEN PURP 400V 12A DO203AA
Vishay General Semiconductor - Diodes Division
5,740 4.04550 Active Standard 400 V 12A 1.26 V @ 38 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 400 V - Chassis, Stud Mount DO-203AA, DO-4, Stud DO-203AA (DO-4) -65°C ~ 175°C Details
HVM16 HVM16
DIODE GEN PURP 16000V 350MA HVM
Rectron USA
3,398 2.10000 Active Standard 16000 V 350mA 14 V @ 350 mA Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 16000 V - Through Hole Axial HVM -20°C ~ 150°C Details
CDBF0130L-HF CDBF0130L-HF
DIODE SCHOTTKY 30V 100MA 1005
Comchip Technology
3,328 0.08050 Active Schottky 30 V 100mA 350 mV @ 10 mA Small Signal =< 200mA (Io), Any Speed - 10 µA @ 10 V - Surface Mount 1005 (2512 Metric) 1005/SOD-323F 125°C (Max) Details
FFSH4065BDN-F085 FFSH4065BDN-F085
SIC DIODE 650V
onsemi
5,585 12.27000 Active Silicon Carbide Schottky 650 V 20A (DC) 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 866pF @ 1V, 100kHz Through Hole TO-247-3 TO-247-3 -55°C ~ 175°C Details

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