Diodes - Rectifiers - Single

47,406 parts
Mfr Part # Qty Price Product Status Diode Type Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Mounting Type Package / Case Supplier Device Package Operating Temperature - Junction
BAL99E6433HTMA1 BAL99E6433HTMA1
DIODE GEN PURP 80V 250MA SOT23-3
Infineon Technologies
120,000 0.03000 Not For New Designs Standard 80 V 250mA (DC) 1.25 V @ 150 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 1 µA @ 70 V 1.5pF @ 0V, 1MHz Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SOT23 -65°C ~ 150°C Details
SS26LWH SS26LWH
DIODE SCHOTTKY 60V 2A SOD123W
Taiwan Semiconductor Corporation
18,755 0.49000 Active Schottky 60 V 2A 700 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 60 V - Surface Mount SOD-123W SOD-123W -55°C ~ 150°C Details
S1JL RVG S1JL RVG
DIODE GEN PURP 600V 1A SUB SMA
Taiwan Semiconductor Corporation
4,328 0.06300 Active Standard 600 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 1.8 µs 5 µA @ 600 V 9pF @ 4V, 1MHz Surface Mount DO-219AB Sub SMA -55°C ~ 175°C Details
RA251-CT RA251-CT
CUT-TAPE VERSION. STANDARD RECO
Diotec Semiconductor
6,045 3.67450 Active Standard 100 V 25A 1.1 V @ 80 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 100 V - Surface Mount RA RA -50°C ~ 175°C Details
UFS340J/TR13 UFS340J/TR13
DIODE GEN PURP 400V 3A DO214AB
Microchip Technology
1,787 2.50500 Active Standard 400 V 3A 1.1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 400 V - Surface Mount DO-214AB, SMC DO-214AB -55°C ~ 175°C Details
UG56G UG56G
DIODE GEN PURP 400V 5A DO201AD
Taiwan Semiconductor Corporation
7,649 0.25110 Active Standard 400 V 5A 1.55 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 10 µA @ 400 V - Through Hole DO-201AD, Axial DO-201AD -55°C ~ 175°C Details
MUR4L60 MUR4L60
DIODE GEN PURP 600V 4A DO201AD
Taiwan Semiconductor Corporation
3,159 0.29030 Active Standard 600 V 4A 1.28 V @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 600 V 65pF @ 4V, 1MHz Through Hole DO-201AD, Axial DO-201AD -55°C ~ 175°C Details
SDUR1030 SDUR1030
DIODE GEN PURP 300V TO220AC
SMC Diode Solutions
836 0.85000 Active Standard 300 V - 1.3 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 30 µA @ 300 V - Through Hole TO-220-2 TO-220AC -55°C ~ 150°C Details
R5001010XXWA R5001010XXWA
RECTIFIER STUD MOUNT FORWARD DO-
Powerex Inc.
3,706 66.29200 Active Standard 1000 V 100A - Standard Recovery >500ns, > 200mA (Io) 7 µs 30 mA @ 1000 V - Stud Mount DO-205AA, DO-8, Stud DO-205AA (DO-8) -65°C ~ 200°C Details
15SQ045 15SQ045
DIODE SCHOTTKY 45V 15A R-6
SMC Diode Solutions
16,500 0.80000 Active Schottky 45 V 15A 550 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 45 V - Through Hole R-6, Axial R-6 -55°C ~ 150°C Details
BAS116,215 BAS116,215
DIODE GEN PURP 75V 215MA SOT23
Nexperia USA Inc.
37,905 0.27000 Active Standard 75 V 215mA (DC) 1.25 V @ 150 mA Standard Recovery >500ns, > 200mA (Io) 3 µs 5 nA @ 75 V 2pF @ 0V, 1MHz Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB 150°C (Max) Details
MMDL770T1G MMDL770T1G
DIODE SCHOTTKY 70V SOD323
onsemi
14,380 0.31000 Active Schottky 70 V - 1 V @ 10 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 35 V 1pF @ 20V, 1MHz Surface Mount SC-76, SOD-323 SOD-323 -55°C ~ 150°C Details
BAS20WTHE3-TP BAS20WTHE3-TP
DIODE GEN PURP 150V 200MA SOT323
Micro Commercial Co
2,980 0.29000 Active Standard 150 V 200mA (DC) 1.25 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 50 ns 100 nA @ 150 V 5pF @ 0V, 1MHz Surface Mount SC-70, SOT-323 SOT-323 -55°C ~ 150°C Details
AU3PDHM3_A/H AU3PDHM3_A/H
DIODE AVALANCHE 200V 1.7A TO277A
Vishay General Semiconductor - Diodes Division
7,874 0.67650 Active Avalanche 200 V 1.7A 1.9 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 200 V 72pF @ 4V, 1MHz Surface Mount TO-277, 3-PowerDFN TO-277A (SMPC) -55°C ~ 175°C Details
SS3P4LHM3_A/I SS3P4LHM3_A/I
DIODE SCHOTTKY 40V 3A TO277A
Vishay General Semiconductor - Diodes Division
6,484 0.23930 Active Schottky 40 V 3A 470 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 250 µA @ 40 V - Surface Mount TO-277, 3-PowerDFN TO-277A (SMPC) -55°C ~ 150°C Details
121NQ035-1 121NQ035-1
DIODE SCHOTTKY 35V 120A PRM1-1
SMC Diode Solutions
7,998 26.73930 Active Schottky 35 V 120A 650 mV @ 120 A Fast Recovery =< 500ns, > 200mA (Io) - 10 mA @ 35 V 5200pF @ 5V, 1MHz Chassis Mount HALF-PAK PRM1-1 (Half Pak Module) -55°C ~ 150°C Details
UG2D UG2D
DIODE GEN PURP 200V 2A DO204AC
Taiwan Semiconductor Corporation
3,248 0.14340 Active Standard 200 V 2A 950 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 5 µA @ 200 V 35pF @ 4V, 1MHz Through Hole DO-204AC, DO-15, Axial DO-204AC (DO-15) -55°C ~ 150°C Details
SB1100 SB1100
RECTIFIER DIODE, SCHOTTKY, 1A, 1
Fairchild Semiconductor
24,023 0.08000 Active Schottky 100 V 1A 790 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 100 V - Through Hole DO-204AC, DO-15, Axial DO15/DO204AC -50°C ~ 150°C Details
SD101CWS-TP SD101CWS-TP
DIODE SCHOTTKY 40V 15MA SOD323
Micro Commercial Co
295,714 0.35000 Active Schottky 40 V 15mA (DC) 900 mV @ 15 mA Small Signal =< 200mA (Io), Any Speed 1 ns 200 nA @ 30 V 2.2pF @ 0V, 1MHz Surface Mount SC-76, SOD-323 SOD-323 -55°C ~ 125°C Details
VB30100S-E3/8W VB30100S-E3/8W
DIODE SCHOTTKY 100V 30A TO263AB
Vishay General Semiconductor - Diodes Division
76,336 1.77000 Active Schottky 100 V 30A 910 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 100 V - Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263AB (D²PAK) -40°C ~ 150°C Details
SS1FL4-M3/H SS1FL4-M3/H
DIODE SCHOTTKY 40V 1A DO-219AB
Vishay General Semiconductor - Diodes Division
6 0.52000 Active Schottky 40 V 1A 500 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 40 V 115pF @ 4V, 1MHz Surface Mount DO-219AB DO-219AB (SMF) -55°C ~ 150°C Details
DZ950N36KHPSA1 DZ950N36KHPSA1
DIODE GEN PURP 3.6KV 950A MODULE
Infineon Technologies
8,240 883.60000 Active Standard 3600 V 950A 1.78 V @ 3000 A Standard Recovery >500ns, > 200mA (Io) - 100 mA @ 3600 V - Chassis Mount Module Module -40°C ~ 150°C Details
PG5396_R2_00001 PG5396_R2_00001
GLASS PASSIVATED JUNCTION PLASTI
Panjit International Inc.
7,406 0.36000 Active Standard 500 V 1.5A 1.4 V @ 1.5 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 500 V 25pF @ 4V, 1MHz Through Hole DO-204AC, DO-15, Axial DO-15 -55°C ~ 150°C Details
STTH812DI STTH812DI
DIODE GEN PURP 1.2KV 8A TO220LNS
STMicroelectronics
8,771 1.94000 Active Standard 1200 V 8A 2.2 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 8 µA @ 1200 V - Through Hole TO-220-2 Insulated, TO-220AC TO-220AC ins 175°C (Max) Details

Looking for Diodes - Rectifiers - Single?

Submit your RFQ and our team will source it for you.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →