Diodes - Rectifiers - Single

47,406 parts
Mfr Part # Qty Price Product Status Diode Type Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Mounting Type Package / Case Supplier Device Package Operating Temperature - Junction
SS36FA SS36FA
DIODE SCHOTTKY 60V 3A SOD123FA
onsemi
24,187 0.53000 Active Schottky 60 V 3A 750 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 60 V 170pF @ 4V, 1MHz Surface Mount SOD-123W SOD-123FA -55°C ~ 150°C Details
SBA240AH-AU_R1_000A1 SBA240AH-AU_R1_000A1
SOD-123HE, SKY
Panjit International Inc.
4,295 0.45000 Active Schottky 40 V 2A 530 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 40 V - Surface Mount SOD-123H SOD-123HE -55°C ~ 150°C Details
S1A-13-F S1A-13-F
DIODE GEN PURP 50V 1A SMA
Diodes Incorporated
513,503 0.27000 Active Standard 50 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 50 V 10pF @ 4V, 1MHz Surface Mount DO-214AC, SMA SMA -65°C ~ 150°C Details
MURS360HE3_A/H MURS360HE3_A/H
DIODE GEN PURP 600V 3A DO214AB
Vishay General Semiconductor - Diodes Division
2,458 0.31280 Active Standard 600 V 3A 1.28 V @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 3 V - Surface Mount DO-214AB, SMC DO-214AB (SMC) -65°C ~ 175°C Details
AS3PJ-M3/86A AS3PJ-M3/86A
DIODE AVALANCHE 600V 2.1A TO277A
Vishay General Semiconductor - Diodes Division
4,860 0.28710 Active Avalanche 600 V 2.1A (DC) 920 mV @ 1.5 A Standard Recovery >500ns, > 200mA (Io) 1.2 µs 10 µA @ 600 V 37pF @ 4V, 1MHz Surface Mount TO-277, 3-PowerDFN TO-277A (SMPC) -55°C ~ 175°C Details
ES1F ES1F
DIODE GEN PURP 300V 1A SMA
onsemi
50,989 0.38000 Active Standard 300 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 300 V 10pF @ 4V, 1MHz Surface Mount DO-214AC, SMA DO-214AC (SMA) 150°C (Max) Details
NTE5921 NTE5921
R-400PRV 20A ANODE CASE
NTE Electronics, Inc
64 12.73000 Active Standard 400 V 20A 1.23 V @ 63 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 400 V - Stud Mount DO-203AA, DO-4, Stud DO-4 -65°C ~ 175°C Details
SBYV28-100-E3/54 SBYV28-100-E3/54
DIODE GEN PURP 100V 3.5A DO201AD
Vishay General Semiconductor - Diodes Division
1,273 0.69000 Active Standard 100 V 3.5A 1.1 V @ 3.5 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 5 µA @ 100 V 20pF @ 4V, 1MHz Through Hole DO-201AD, Axial DO-201AD -55°C ~ 150°C Details
VT3080S-M3/4W VT3080S-M3/4W
DIODE SCHOTTKY 30A 80V TO-220AB
Vishay General Semiconductor - Diodes Division
5,239 0.68900 Active Schottky 80 V 30A 950 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 80 V - Through Hole TO-220-3 TO-220-3 -55°C ~ 150°C Details
1N1192RA 1N1192RA
20 AMP SILICON RECTIFIER DO-5
Solid State Inc.
8,307 2.50000 Active Standard, Reverse Polarity - 12A 1.2 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - - - Stud Mount DO-203AA, DO-4, Stud DO-4 -65°C ~ 200°C Details
UF1010G_R2_00001 UF1010G_R2_00001
GLASS PASSIVATED JUNCTION ULTRAF
Panjit International Inc.
4,997 0.34000 Active Standard 1000 V 1A 1.7 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 1 µA @ 1000 V 17pF @ 4V, 1MHz Through Hole DO-204AL, DO-41, Axial DO-41 -55°C ~ 150°C Details
S2MA S2MA
DIODE GEN PURP 1.5A DO214AC
Taiwan Semiconductor Corporation
2,559 0.06760 Active Standard - 1.5A 1.1 V @ 1.5 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 1000 V 30pF @ 4V, 1MHz Surface Mount DO-214AC, SMA DO-214AC (SMA) -55°C ~ 150°C Details
SBR3U40S1FQ-7 SBR3U40S1FQ-7
DIODE SBR 40V 3A SOD123F
Diodes Incorporated
1,617 0.13340 Active Super Barrier 40 V 3A 490 mV @ 3 A Standard Recovery >500ns, > 200mA (Io) - 180 µA @ 40 V - Surface Mount SOD-123F SOD-123F -65°C ~ 150°C Details
JANTX1N6621US JANTX1N6621US
DIODE GEN PURP 440V 2A D5A
Microchip Technology
7,738 13.77000 Active Standard 440 V 2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 440 V 10pF @ 10V, 1MHz Surface Mount SQ-MELF, A D-5A -65°C ~ 150°C Details
SL43-M3/57T SL43-M3/57T
DIODE SCHOTTKY 4A 30V DO-214AB
Vishay General Semiconductor - Diodes Division
5,069 0.88000 Active Schottky 30 V 4A 420 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 30 V - Surface Mount DO-214AB, SMC DO-214AB (SMC) -55°C ~ 125°C Details
UFS380J/TR13 UFS380J/TR13
DIODE GEN PURP 800V 3A DO214AB
Microchip Technology
2,230 2.50500 Active Standard 800 V 3A 1.2 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 10 µA @ 800 V - Surface Mount DO-214AB, SMC DO-214AB -55°C ~ 175°C Details
BAT721,215 BAT721,215
DIODE SCHOTTKY 40V 200MA TO236AB
Nexperia USA Inc.
11,467 0.09913 Active Schottky 40 V 200mA (DC) 550 mV @ 200 mA Small Signal =< 200mA (Io), Any Speed - 15 µA @ 30 V 50pF @ 0V, 1MHz Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236AB 125°C (Max) Details
UG1C-M3/54 UG1C-M3/54
DIODE GEN PURP 150V 1A DO204AL
Vishay General Semiconductor - Diodes Division
6,137 0.09970 Active Standard 150 V 1A 950 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 5 µA @ 150 V 7pF @ 4V, 1MHz Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) -55°C ~ 150°C Details
SD101AW SD101AW
SchottkyD, 60V, 0.015A
Diotec Semiconductor
9,023 0.19730 Active Schottky 60 V 15mA 1 V @ 15 mA Small Signal =< 200mA (Io), Any Speed 1 ns 200 nA @ 50 V 2pF @ 0V, 1MHz Surface Mount SOD-123F SOD-123F -55°C ~ 125°C Details
VS-30ETH06S-M3 VS-30ETH06S-M3
DIODE ULTRA FAST 600V 30A D2PAK
Vishay General Semiconductor - Diodes Division
3,018 1.80000 Active Standard 600 V 30A 2.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 50 µA @ 600 V - Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263AB (D²PAK) -65°C ~ 175°C Details
BYT52G-TR BYT52G-TR
DIODE AVALANCHE 400V 1.4A SOD57
Vishay General Semiconductor - Diodes Division
3,196 0.27720 Active Avalanche 400 V 1.4A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 400 V - Through Hole SOD-57, Axial SOD-57 -55°C ~ 175°C Details
SK26-LTP SK26-LTP
DIODE SCHOTTKY 60V 2A DO214AA
Micro Commercial Co
8,406 0.08800 Active Schottky 60 V 2A 700 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 60 V 50pF @ 4V, 1MHz Surface Mount DO-214AA, SMB DO-214AA, HSMB -55°C ~ 125°C Details
RS2A-M3/52T RS2A-M3/52T
DIODE GEN PURP 50V 1.5A DO214AA
Vishay General Semiconductor - Diodes Division
7,400 0.11420 Active Standard 50 V 1.5A 1.3 V @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 50 V 20pF @ 4V, 1MHz Surface Mount DO-214AA, SMB DO-214AA (SMB) -55°C ~ 150°C Details
16F10 16F10
16 AMP SILCON RECTIFIER DO4 KK
Solid State Inc.
4,387 1.66700 Active Standard 100 V 16A - Standard Recovery >500ns, > 200mA (Io) - - - Stud Mount DO-203AA, DO-4, Stud DO-4 - Details

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