SILICON CARBIDE SCHOTTKY DIODE I
WNSC6D04650Q is a Diodes - Rectifiers - Single manufactured by WeEn Semiconductors. SILICON CARBIDE SCHOTTKY DIODE I. Key specifications: mounting type Through Hole, package / case TO-220-2.
In Stock: 3,000
| Product Status | Active |
|---|---|
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 4A |
| Voltage - Forward (Vf) (Max) @ If | 1.4 V @ 4 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 30 µA @ 650 V |
|---|---|
| Capacitance @ Vr, F | 233pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C |
Vishay General Semiconductor - Diodes Division
RS1J-E3/61T
0.50000
RFQ
NXP USA Inc.
PMEG1201AESFC315
0.04000
RFQ
Taiwan Semiconductor Corporation
1N4005G A0G
0.40000
RFQ
NTE Electronics, Inc
NTE558
1.90000
RFQ
Vishay General Semiconductor - Diodes Division
V2PM10L-M3/H
0.44000
RFQ
Diotec Semiconductor
S5D
0.16160
RFQ
Submit your RFQ and get a quote within 24 hours.
