SILICON CARBIDE POWER DIODE
WNSC201200CWQ is a Diodes - Rectifiers - Single manufactured by WeEn Semiconductors. SILICON CARBIDE POWER DIODE. Key specifications: mounting type Through Hole, package / case TO-247-3.
In Stock: 2,209
| Product Status | Active |
|---|---|
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 20A |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 110 µA @ 1200 V |
|---|---|
| Capacitance @ Vr, F | 510pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | 175°C (Max) |
Vishay General Semiconductor - Diodes Division
RS1J-E3/61T
0.50000
RFQ
NXP USA Inc.
PMEG1201AESFC315
0.04000
RFQ
Taiwan Semiconductor Corporation
1N4005G A0G
0.40000
RFQ
NTE Electronics, Inc
NTE558
1.90000
RFQ
Vishay General Semiconductor - Diodes Division
V2PM10L-M3/H
0.44000
RFQ
Diotec Semiconductor
S5D
0.16160
RFQ
Submit your RFQ and get a quote within 24 hours.
