VQ1006P-E3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: VQ1006P-E3 Vishay Siliconix
VQ1006P-E3

Vishay Siliconix

MOSFET 4N-CH 90V 0.4A 14DIP

VQ1006P-E3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 4N-CH 90V 0.4A 14DIP. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), supplier device package 14-DIP, power - max 2W.

In Stock: 5,025

Specifications

14 parameters
Product StatusObsolete
FET Type4 N-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)90V
Current - Continuous Drain (Id) @ 25°C400mA
Rds On (Max) @ Id, Vgs4.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds60pF @ 25V
Power - Max2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / Case-
Supplier Device Package14-DIP

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