Name: SUM90330E-GE3
Brand: Vishay Siliconix
SKU: SUM90330E-GE3
Price: 1.80 USD
Availability: InStock

REF: SUM90330E-GE3 Vishay Siliconix

SUM90330E-GE3

Vishay Siliconix

MOSFET N-CH 200V 35.1A TO263

SUM90330E-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 200V 35.1A TO263. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

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In Stock: 8,171

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	35.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	37.5mOhm @ 12.2A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1172 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D²Pak)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB