Name: SUD20N10-66L-GE3
Brand: Vishay Siliconix
SKU: SUD20N10-66L-GE3
Price: 0.90 USD
Availability: InStock

REF: SUD20N10-66L-GE3 Vishay Siliconix

SUD20N10-66L-GE3

Vishay Siliconix

MOSFET N-CH 100V 16.9A TO252

SUD20N10-66L-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 100V 16.9A TO252. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

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In Stock: 3,571

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	16.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	66mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	860 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 41.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63