Name: SQV120N10-3M8_GE3
Brand: Vishay Siliconix
SKU: SQV120N10-3M8_GE3
Availability: InStock

REF: SQV120N10-3M8_GE3 Vishay Siliconix

SQV120N10-3M8_GE3

MOSFET N-CH 100V 120A TO262-3

SQV120N10-3M8_GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 100V 120A TO262-3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 28-SOIC (0.295", 7.50mm Width).

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In Stock: 2,963

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	190 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7230 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	28-SOIC
Package / Case	28-SOIC (0.295", 7.50mm Width)