Name: SQS966ENW-T1_GE3
Brand: Vishay Siliconix
SKU: SQS966ENW-T1_GE3
Price: 1.03 USD
Availability: InStock

REF: SQS966ENW-T1_GE3 Vishay Siliconix

SQS966ENW-T1_GE3

Vishay Siliconix

MOSFET N-CHAN 60V

SQS966ENW-T1_GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET N-CHAN 60V. Key specifications: mounting type Surface Mount, Wettable Flank, operating temperature -55°C ~ 175°C (TJ), package / case PowerPAK® 1212-8W Dual, power - max 27.8W (Tc).

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In Stock: 4,571

Specifications

14 parameters

Product Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Rds On (Max) @ Id, Vgs	36mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs	8.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	572pF @ 25V
Power - Max	27.8W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount, Wettable Flank
Package / Case	PowerPAK® 1212-8W Dual
Supplier Device Package	PowerPAK® 1212-8W Dual