Name: SQS850EN-T1_BE3
Brand: Vishay Siliconix
SKU: SQS850EN-T1_BE3
Price: 1.08 USD
Availability: InStock

REF: SQS850EN-T1_BE3 Vishay Siliconix

SQS850EN-T1_BE3

Vishay Siliconix

N-CHANNEL 60-V (D-S) 175C MOSFET

SQS850EN-T1_BE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. N-CHANNEL 60-V (D-S) 175C MOSFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case PowerPAK® 1212-8.

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In Stock: 6,640

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	21.5mOhm @ 6.1A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	41 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2021 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	33W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8