SQS415ENW-T1_GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SQS415ENW-T1_GE3 Vishay Siliconix
SQS415ENW-T1_GE3

Vishay Siliconix

MOSFET P-CH 40V 16A PPAK1212-8W

SQS415ENW-T1_GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 40V 16A PPAK1212-8W. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case PowerPAK® 1212-8W.

In Stock: 2,819

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs16.1mOhm @ 12A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs82 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4825 pF @ 25 V
FET Feature-
Power Dissipation (Max)62.5W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8W
Package / CasePowerPAK® 1212-8W

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