SQJB04ELP-T1_GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SQJB04ELP-T1_GE3 Vishay Siliconix
SQJB04ELP-T1_GE3

Vishay Siliconix

DUAL N-CHANNEL 40-V (D-S) 175C M

SQJB04ELP-T1_GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. DUAL N-CHANNEL 40-V (D-S) 175C M. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case PowerPAK® SO-8 Dual, power - max 27W (Tc).

In Stock: 5,082

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs11mOhm @ 5A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1055pF @ 25V
Power - Max27W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

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