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SQJA12EP-T1_GE3

In Stock: 9,340
SQJA12EP-T1_GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SQJA12EP-T1_GE3 Vishay Siliconix
SQJA12EP-T1_GE3

Vishay Siliconix

N-CHANNEL 100-V (D-S) 175C MOSFE

SQJA12EP-T1_GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. N-CHANNEL 100-V (D-S) 175C MOSFE. Key specifications: operating temperature -55°C ~ 125°C.

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In Stock: 9,340

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs49.1 nC @ 10 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds3635 pF @ 25 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-55°C ~ 125°C
Mounting Type-
Supplier Device Package-
Package / Case-

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