SQJ912BEP-T1_GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SQJ912BEP-T1_GE3 Vishay Siliconix
SQJ912BEP-T1_GE3

Vishay Siliconix

MOSFET N-CH DUAL 40V PPSO-8L

SQJ912BEP-T1_GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET N-CH DUAL 40V PPSO-8L. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case PowerPAK® SO-8 Dual, power - max 48W (Tc).

In Stock: 9,858

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs11mOhm @ 9A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds3000pF @ 25V
Power - Max48W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

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