Name: SQJ912AEP-T1_GE3
Brand: Vishay Siliconix
SKU: SQJ912AEP-T1_GE3
Availability: InStock

REF: SQJ912AEP-T1_GE3 Vishay Siliconix

SQJ912AEP-T1_GE3

MOSFET 2N-CH 40V 30A PPAK SO-8

SQJ912AEP-T1_GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 40V 30A PPAK SO-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case PowerPAK® SO-8 Dual, power - max 48W.

Datasheet Request a Quote

In Stock: 2,632

Specifications

14 parameters

Product Status	Obsolete
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	30A
Rds On (Max) @ Id, Vgs	9.3mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1835pF @ 20V
Power - Max	48W
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Supplier Device Package	PowerPAK® SO-8 Dual