SQJ910AEP-T2_GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SQJ910AEP-T2_GE3 Vishay Siliconix
SQJ910AEP-T2_GE3

Vishay Siliconix

DUAL N-CHANNEL 30-V (D-S) 175C M

SQJ910AEP-T2_GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. DUAL N-CHANNEL 30-V (D-S) 175C M. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case PowerPAK® SO-8 Dual, power - max 48W (Tc).

In Stock: 1,234

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs7mOhm @ 12A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1869pF @ 15V
Power - Max48W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

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