SQJ868EP-T1_BE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SQJ868EP-T1_BE3 Vishay Siliconix
SQJ868EP-T1_BE3

Vishay Siliconix

N-CHANNEL 40-V (D-S) 175C MOSFET

SQJ868EP-T1_BE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. N-CHANNEL 40-V (D-S) 175C MOSFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case PowerPAK® SO-8 Dual.

In Stock: 8,471

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7.35mOhm @ 14A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs55 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2450 pF @ 20 V
FET Feature-
Power Dissipation (Max)48W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8 Dual
Package / CasePowerPAK® SO-8 Dual

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