SQJ123ELP-T1_GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SQJ123ELP-T1_GE3 Vishay Siliconix
SQJ123ELP-T1_GE3

Vishay Siliconix

AUTOMOTIVE P-CHANNEL 12 V (D-S)

SQJ123ELP-T1_GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. AUTOMOTIVE P-CHANNEL 12 V (D-S). Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case PowerPAK® SO-8.

In Stock: 4,249

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12 V
Current - Continuous Drain (Id) @ 25°C238A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs4mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs180 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds11680 pF @ 6 V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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