Name: SQD100N04_3M6T4GE3
Brand: Vishay Siliconix
SKU: SQD100N04_3M6T4GE3
Price: 0.78 USD
Availability: InStock

REF: SQD100N04_3M6T4GE3 Vishay Siliconix

SQD100N04_3M6T4GE3

Vishay Siliconix

MOSFET N-CH 40V 100A TO252AA

SQD100N04_3M6T4GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 40V 100A TO252AA. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C, package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

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In Stock: 2,310

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	105 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6700 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	136W (Tc)
Operating Temperature	-55°C ~ 175°C
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63