SQA470EJ-T1_GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SQA470EJ-T1_GE3 Vishay Siliconix
SQA470EJ-T1_GE3

Vishay Siliconix

MOSFET N-CH 30V 2.25A PPAK SC70

SQA470EJ-T1_GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 30V 2.25A PPAK SC70. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case PowerPAK® SC-70-6.

In Stock: 1,865

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C2.25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs65mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6 nC @ 4.5 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds440 pF @ 20 V
FET Feature-
Power Dissipation (Max)13.6W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6 Single
Package / CasePowerPAK® SC-70-6

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