SQA410CEJW-T1_GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SQA410CEJW-T1_GE3 Vishay Siliconix
SQA410CEJW-T1_GE3

Vishay Siliconix

AUTOMOTIVE N-CHANNEL 20 V (D-S)

SQA410CEJW-T1_GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. AUTOMOTIVE N-CHANNEL 20 V (D-S). Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case PowerPAK® SC-70-6 Dual.

In Stock: 18

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C7.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs28mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds525 pF @ 10 V
FET Feature-
Power Dissipation (Max)13.6W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6 Dual
Package / CasePowerPAK® SC-70-6 Dual

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