SQ4153EY-T1_GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SQ4153EY-T1_GE3 Vishay Siliconix
SQ4153EY-T1_GE3

Vishay Siliconix

MOSFET P-CHANNEL 12V 25A 8SOIC

SQ4153EY-T1_GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CHANNEL 12V 25A 8SOIC. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width).

In Stock: 4,524

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12 V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs8.32mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs151 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds11000 pF @ 6 V
FET Feature-
Power Dissipation (Max)7.1W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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