SQ3419AEEV-T1_GE3

In Stock: 9,559
SQ3419AEEV-T1_GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SQ3419AEEV-T1_GE3 Vishay Siliconix
SQ3419AEEV-T1_GE3

Vishay Siliconix

MOSFET P-CHANNEL 40V 6.9A 6TSOP

SQ3419AEEV-T1_GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CHANNEL 40V 6.9A 6TSOP. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case SOT-23-6 Thin, TSOT-23-6.

In Stock: 9,559

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C6.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs61mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12.5 nC @ 4.5 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds975 pF @ 20 V
FET Feature-
Power Dissipation (Max)5W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6 Thin, TSOT-23-6

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