Name: SQ2337ES-T1_GE3
Brand: Vishay Siliconix
SKU: SQ2337ES-T1_GE3
Price: 0.72 USD
Availability: InStock

REF: SQ2337ES-T1_GE3 Vishay Siliconix

SQ2337ES-T1_GE3

Vishay Siliconix

MOSFET P-CH 80V 2.2A SOT23-3

SQ2337ES-T1_GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 80V 2.2A SOT23-3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-236-3, SC-59, SOT-23-3.

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In Stock: 2,697

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	290mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	620 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	3W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3