Name: SQ2319ES-T1-GE3
Brand: Vishay Siliconix
SKU: SQ2319ES-T1-GE3
Availability: InStock

REF: SQ2319ES-T1-GE3 Vishay Siliconix

SQ2319ES-T1-GE3

MOSFET P-CH 40V 4.6A TO-236

SQ2319ES-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 40V 4.6A TO-236. Key specifications: mounting type Surface Mount, package / case TO-236-3, SC-59, SOT-23-3.

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In Stock: 7,668

Specifications

17 parameters

Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	75mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V

Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	620 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3