Name: SQ2301ES-T1_GE3
Brand: Vishay Siliconix
SKU: SQ2301ES-T1_GE3
Price: 0.56 USD
Availability: InStock

REF: SQ2301ES-T1_GE3 Vishay Siliconix

SQ2301ES-T1_GE3

Vishay Siliconix

MOSFET P-CH 20V 3.9A TO236

SQ2301ES-T1_GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 20V 3.9A TO236. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TA), package / case TO-236-3, SC-59, SOT-23-3.

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In Stock: 7,573

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	120mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 4.5 V

Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	425 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	3W (Tc)
Operating Temperature	-55°C ~ 175°C (TA)
Mounting Type	Surface Mount
Supplier Device Package	TO-236 (SOT-23)
Package / Case	TO-236-3, SC-59, SOT-23-3