SIZF918DT-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SIZF918DT-T1-GE3 Vishay Siliconix
SIZF918DT-T1-GE3

Vishay Siliconix

MOSFET DUAL N-CH 30V POWERPAIR 6

SIZF918DT-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET DUAL N-CH 30V POWERPAIR 6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerWDFN, power - max 3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc).

In Stock: 6,188

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual), Schottky
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA, 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V, 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1060pF @ 15V, 2650pF @ 15V
Power - Max3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device Package8-PowerPair® (6x5)

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