SIZF914DT-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SIZF914DT-T1-GE3 Vishay Siliconix
SIZF914DT-T1-GE3

Vishay Siliconix

DUAL N-CH 25-V (D-S) MOSFET W/SC

SIZF914DT-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. DUAL N-CH 25-V (D-S) MOSFET W/SC. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerWDFN, power - max 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc).

In Stock: 3,241

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs21nC @ 10V, 98nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1050pF @ 10V, 4670pF @ 10V
Power - Max3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device Package8-PowerPair® (6x5)

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