Name: SIZF906BDT-T1-GE3
Brand: Vishay Siliconix
SKU: SIZF906BDT-T1-GE3
Price: 1.73 USD
Availability: InStock

REF: SIZF906BDT-T1-GE3 Vishay Siliconix

SIZF906BDT-T1-GE3

Vishay Siliconix

DUAL N-CHANNEL 30 V (D-S) MOSFET

SIZF906BDT-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. DUAL N-CHANNEL 30 V (D-S) MOSFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerWDFN, power - max 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc).

Datasheet Request a Quote

In Stock: 4,247

Specifications

14 parameters

Product Status	Active
FET Type	2 N-Channel (Dual), Schottky
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
Rds On (Max) @ Id, Vgs	2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs	49nC @ 10V, 165nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1630pF @ 15V, 5550pF @ 15V
Power - Max	4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Supplier Device Package	8-PowerPair® (6x5)