SIZF640DT-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SIZF640DT-T1-GE3 Vishay Siliconix
SIZF640DT-T1-GE3

Vishay Siliconix

DUAL N-CHANNEL 40 V (D-S) MOSFET

SIZF640DT-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. DUAL N-CHANNEL 40 V (D-S) MOSFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerDFN, power - max 4.2W (Ta), 62.5W (Tc).

In Stock: 5,118

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual) Common Source
FET FeatureStandard
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C41A (Ta), 159A (Tc)
Rds On (Max) @ Id, Vgs1.37mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs106nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds5750pF @ 20V
Power - Max4.2W (Ta), 62.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerDFN
Supplier Device PackagePowerPAIR® 6x5FS

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