Name: SIZ998BDT-T1-GE3
Brand: Vishay Siliconix
SKU: SIZ998BDT-T1-GE3
Price: 0.98 USD
Availability: InStock

REF: SIZ998BDT-T1-GE3 Vishay Siliconix

SIZ998BDT-T1-GE3

Vishay Siliconix

DUAL N-CHANNEL 30-V (D-S) MOSFET

SIZ998BDT-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. DUAL N-CHANNEL 30-V (D-S) MOSFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerWDFN, power - max 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc).

Request a Quote

In Stock: 17

Specifications

14 parameters

Product Status	Active
FET Type	2 N-Channel (Dual), Schottky
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
Rds On (Max) @ Id, Vgs	4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V, 46.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	790pF @ 15V, 2130pF @ 15V
Power - Max	3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Supplier Device Package	8-PowerPair® (6x5)