SIZ980BDT-T1-GE3

In Stock: 11,900
SIZ980BDT-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SIZ980BDT-T1-GE3 Vishay Siliconix
SIZ980BDT-T1-GE3

Vishay Siliconix

MOSFET DUAL N-CH 30V PPAIR 6 X 5

SIZ980BDT-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET DUAL N-CH 30V PPAIR 6 X 5. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerWDFN, power - max 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc).

In Stock: 11,900

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual), Schottky
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18nC @ 10V, 79nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds790pF @ 15V, 3655pF @ 15V
Power - Max3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device Package8-PowerPair® (6x5)

Need a Quote for SIZ980BDT-T1-GE3?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →