SIZ900DT-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SIZ900DT-T1-GE3 Vishay Siliconix
SIZ900DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 24A POWERPAIR

SIZ900DT-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 30V 24A POWERPAIR. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-PowerPair™, power - max 48W, 100W.

In Stock: 2,042

Specifications

14 parameters
Product StatusObsolete
FET Type2 N-Channel (Half Bridge)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C24A, 28A
Rds On (Max) @ Id, Vgs7.2mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1830pF @ 15V
Power - Max48W, 100W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-PowerPair™
Supplier Device Package6-PowerPair™

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