SIZ256DT-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SIZ256DT-T1-GE3 Vishay Siliconix
SIZ256DT-T1-GE3

Vishay Siliconix

DUAL N-CHANNEL 70 V (D-S) MOSFET

SIZ256DT-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. DUAL N-CHANNEL 70 V (D-S) MOSFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerWDFN, power - max 4.3W (Ta), 33W (Tc).

In Stock: 4,332

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)70V
Current - Continuous Drain (Id) @ 25°C11.5A (Ta), 31.8A (Tc)
Rds On (Max) @ Id, Vgs17.6mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1060pF @ 35V
Power - Max4.3W (Ta), 33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device Package8-PowerPair® (3.3x3.3)

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