Name: SISS92DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS92DN-T1-GE3
Price: 1.25 USD
Availability: InStock

REF: SISS92DN-T1-GE3 Vishay Siliconix

SISS92DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 250V 3.4A/12.3A PPAK

SISS92DN-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 250V 3.4A/12.3A PPAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® 1212-8S.

Datasheet Request a Quote

In Stock: 1,432

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V
Current - Continuous Drain (Id) @ 25°C	3.4A (Ta), 12.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	173mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	350 pF @ 125 V
FET Feature	-
Power Dissipation (Max)	5.1W (Ta), 65.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S
Package / Case	PowerPAK® 1212-8S