Name: SISS80DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS80DN-T1-GE3
Price: 1.75 USD
Availability: InStock

REF: SISS80DN-T1-GE3 Vishay Siliconix

SISS80DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 58.3A/210A PPAK

SISS80DN-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 20V 58.3A/210A PPAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® 1212-8S.

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In Stock: 9,142

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	58.3A (Ta), 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	0.92mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	122 nC @ 10 V

Vgs (Max)	+12V, -8V
Input Capacitance (Ciss) (Max) @ Vds	6450 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 65W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S
Package / Case	PowerPAK® 1212-8S