SISS78LDN-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SISS78LDN-T1-GE3 Vishay Siliconix
SISS78LDN-T1-GE3

Vishay Siliconix

MOSFET N-CH 70V 19.4A/66.7A PPAK

SISS78LDN-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 70V 19.4A/66.7A PPAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® 1212-8SH.

In Stock: 5,735

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)70 V
Current - Continuous Drain (Id) @ 25°C19.4A (Ta), 66.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2280 pF @ 35 V
FET Feature-
Power Dissipation (Max)4.8W (Ta), 57W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8SH
Package / CasePowerPAK® 1212-8SH

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