Name: SISS60DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS60DN-T1-GE3
Price: 0.72 USD
Availability: InStock

REF: SISS60DN-T1-GE3 Vishay Siliconix

SISS60DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 50.1/181.8A PPAK

SISS60DN-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 30V 50.1/181.8A PPAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® 1212-8S.

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In Stock: 8,526

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	50.1A (Ta), 181.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.31mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	85.5 nC @ 10 V

Vgs (Max)	+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds	3960 pF @ 15 V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	5.1W (Ta), 65.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S
Package / Case	PowerPAK® 1212-8S