Name: SISS23DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS23DN-T1-GE3
Price: 0.90 USD
Availability: InStock

REF: SISS23DN-T1-GE3 Vishay Siliconix

SISS23DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 50A PPAK 1212-8S

SISS23DN-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 20V 50A PPAK 1212-8S. Key specifications: mounting type Surface Mount, operating temperature -50°C ~ 150°C (TJ), package / case PowerPAK® 1212-8S.

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In Stock: 6,353

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	300 nC @ 10 V

Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	8840 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	4.8W (Ta), 57W (Tc)
Operating Temperature	-50°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S
Package / Case	PowerPAK® 1212-8S