Name: SISS10DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS10DN-T1-GE3
Price: 1.06 USD
Availability: InStock

REF: SISS10DN-T1-GE3 Vishay Siliconix

SISS10DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 40V 60A PPAK 1212-8S

SISS10DN-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 40V 60A PPAK 1212-8S. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® 1212-8S.

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In Stock: 2,499

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10 V

Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	3750 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	57W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S
Package / Case	PowerPAK® 1212-8S