Name: SISS08DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS08DN-T1-GE3
Price: 1.20 USD
Availability: InStock

REF: SISS08DN-T1-GE3 Vishay Siliconix

SISS08DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 25V 53.9/195.5A PPAK

SISS08DN-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 25V 53.9/195.5A PPAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® 1212-8S.

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In Stock: 6,043

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	53.9A (Ta), 195.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.23mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	82 nC @ 10 V

Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	3670 pF @ 12.5 V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 65.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S
Package / Case	PowerPAK® 1212-8S