Name: SISH129DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISH129DN-T1-GE3
Price: 0.98 USD
Availability: InStock

REF: SISH129DN-T1-GE3 Vishay Siliconix

SISH129DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 14.4A/35A PPAK

SISH129DN-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 30V 14.4A/35A PPAK. Key specifications: mounting type Surface Mount, operating temperature -50°C ~ 150°C (TJ), package / case PowerPAK® 1212-8SH.

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In Stock: 5,932

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	14.4A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	11.4mOhm @ 14.4A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	71 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3345 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 52.1W (Tc)
Operating Temperature	-50°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8SH
Package / Case	PowerPAK® 1212-8SH