Name: SISH110DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISH110DN-T1-GE3
Price: 0.74 USD
Availability: InStock

REF: SISH110DN-T1-GE3 Vishay Siliconix

SISH110DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 13.5A PPAK

SISH110DN-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 20V 13.5A PPAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® 1212-8SH.

Datasheet Request a Quote

In Stock: 2,303

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	13.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.3mOhm @ 21.1A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 4.5 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	1.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8SH
Package / Case	PowerPAK® 1212-8SH