Name: SISA18BDN-T1-GE3
Brand: Vishay Siliconix
SKU: SISA18BDN-T1-GE3
Price: 0.73 USD
Availability: InStock

REF: SISA18BDN-T1-GE3 Vishay Siliconix

SISA18BDN-T1-GE3

Vishay Siliconix

N-CHANNEL 30 V (D-S) MOSFET POWE

SISA18BDN-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. N-CHANNEL 30 V (D-S) MOSFET POWE. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerWDFN.

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In Stock: 6,001

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	18A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.83mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V

Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	680 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	3.2W (Ta), 36.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8PT
Package / Case	8-PowerWDFN